View PB-IRFU6215_9072965.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

irfr/u6215 preliminary hexfet ? power mosfet v dss = -150v r ds(on) = 0.295 i d = -13a description 5/11/98 parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v -13 i d @ t c = 100c continuous drain current, v gs @ 10v -9.0 a i dm pulsed drain current ?? -44 p d @t c = 25c power dissipation 110 w linear derating factor 0.71 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ?? 310 mj i ar avalanche current ?? -6.6 a e ar repetitive avalanche energy ?? 11 mj dv/dt peak diode recovery dv/dt ? 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings parameter typ. max. units r jc junction-to-case CCC 1.4 r ja junction-to-ambient (pcb mount) ** CCC 50 c/w r ja junction-to-ambient CCC 110 thermal resistance d-p ak to-252aa i-pa k to-251aa l p-channel l 175c operating temperature l surface mount (irfr6215) l straight lead (irfu6215) l advanced process technology l fast switching l fully avalanche rated fifth generation hexfets from international rectifierutilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. the d-pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. the straight lead version (irfu series) is for through- hole mounting applications. power dissipation levels up to 1.5 watts are possible in typical surface mount applications. pd - 91749 www.irf.com 1 s d g downloaded from: http:///
irfr/u6215 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -150 CCC CCC v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC -0.20 CCC v/c reference to 25c, i d = -1ma CCC CCC 0.295 v gs = -10v, i d = -6.6a ? CCC CCC 0.58 v gs = -10v, i d = -6.6a ? t j = 150c v gs(th) gate threshold voltage -2.0 CCC -4.0 v v ds = v gs , i d = -250a g fs forward transconductance 3.6 CCC CCC s v ds = -50v, i d = -6.6a ? CCC CCC -25 a v ds = -150v, v gs = 0v CCC CCC -250 v ds = -120v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 na v gs = 20v gate-to-source reverse leakage CCC CCC -100 v gs = -20v q g total gate charge CCC CCC 66 i d = -6.6a q gs gate-to-source charge CCC CCC 8.1 nc v ds = -120v q gd gate-to-drain ("miller") charge CCC CCC 35 v gs = -10v, see fig. 6 and 13 ?? t d(on) turn-on delay time CCC 14 CCC v dd = -75v t r rise time CCC 36 CCC ns i d = -6.6a t d(off) turn-off delay time CCC 53 CCC r g = 6.8 t f fall time CCC 37 CCC r d = 12 , see fig. 10 ?? between lead,6mm (0.25in.) from package and center of die contact ? c iss input capacitance CCC 860 CCC v gs = 0v c oss output capacitance CCC 220 CCC pf v ds = -25v c rss reverse transfer capacitance CCC 130 CCC ? = 1.0mhz, see fig. 5 ? electrical characteristics @ t j = 25c (unless otherwise specified) nh i gss l s internal source inductance CCC 7.5 CCC r ds(on) static drain-to-source on-resistance l d internal drain inductance CCC 4.5 CCC i dss drain-to-source leakage current parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ?? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC -1.6 v t j = 25c, i s = -6.6a, v gs = 0v ? t rr reverse recovery time CCC 160 240 ns t j = 25c, i f = -6.6a q rr reverse recoverycharge CCC 1.2 1.7 c di/dt = 100a/s ?? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics a -13 -44 notes: ? starting t j = 25c, l = 14mh r g = 25 , i as = -6.6a. (see figure 12) ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ** when mounted on 1" square pcb (fr-4 or g-10 material ) for recommended footprint and soldering techniques refer to application note #an-994 ? i sd -6.6a, di/dt -620a/s, v dd v (br)dss , t j 175c ? uses irf6215 data and test conditions ? pulse width 300s; duty cycle 2% ? this is applied for i-pak, l s of d-pak is measured between lead and center of die contact s d g s d g downloaded from: http:///
irfr/u6215 www.irf.com 3 fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 1. typical output characteristics fig 2. typical output characteristics 1 10 100 1 10 100 d ds 20s pulse w idth t = 25c c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4 .5 v 1 10 100 1 10 100 d ds a -i , drain-to-source current (a) -v , drain-to-source volta g e ( v ) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 20 s pulse w idth t = 175c c 1 10 100 4567891 0 t = 25c j gs d a -i , drain-to-source c urrent (a) -v , gate-to-source voltage (v) t = 175c j v = -5 0 v 20s pulse w idth ds 0.0 0.5 1.0 1.5 2.0 2.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (n orm alized) a v = -10v gs i = -11a d downloaded from: http:///
irfr/u6215 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 4 8 12 16 20 0 2 04 06 08 0 g gs a -v , gate-to-source voltage (v) q , total g ate char g e ( nc ) for test circuit see figure 13 i = -6.6a v = -120v v = -75v v = -30v d dsds ds 0.1 1 10 100 0.2 0.6 1.0 1.4 1.8 t = 25c j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) t = 175c j 1 10 100 1 10 100 1000 ope ration in this area limite d by r ds(on) 10ms a -i , drain current (a) -v , drain-to-source volta g e ( v ) ds d 10s 100s 1ms t = 25c t = 175c sin g le pulse cj 0 400 800 1200 1600 2000 1 10 100 c, capacitance (pf) a ds -v , drain-to-source volta g e ( v ) v = 0v , f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss downloaded from: http:///
irfr/u6215 www.irf.com 5 fig 9. maximum drain current vs. case temperature fig 11. maximum effective transient thermal impedance, junction-to-case fig 10a. switching time test circuit fig 10b. switching time waveforms v ds -10v pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 175 0 2 4 6 8 10 12 14 t , case temperature ( c) -i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 s in g le p u l s e (thermal response) a thermal response (z ) p t 2 1 t dm notes: 1. d uty factor d = t / t 2. peak t = p x z + t 1 2 j dm th jc c downloaded from: http:///
irfr/u6215 6 www.irf.com fig 12c. maximum avalanche energy vs. drain current 0 200 400 600 800 25 50 75 100 125 150 175 j e , single pulse avalanche energy (m j) as a startin g t , junction temperature ( c ) i top -2.7a -4.7a bo tto m -6.6a d fig 13b. gate charge test circuit fig 13a. basic gate charge waveform q g q gs q gd v g charge -10v d.u.t. v ds i d i g -3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v ( br ) dss i as r g i as 0.01 t p d.u.t l v ds v dd driver a 15v -20v downloaded from: http:///
irfr/u6215 www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd ? dv/dt controlled by r g ? driver same type as d.u.t. ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer ? * * reverse polarity of d.u.t for p-channel downloaded from: http:///
irfr/u6215 8 www.irf.com package outline to-252aa outlinedimensions are shown in millimeters (inches) to-252aa (d-park) part marking information 6.73 (.265) 6.35 (.250) - a - 4 1 2 3 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.2 5 (.0 10 ) m a m b 4.57 (.180) 2.28 (.090) 2x 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) m in . 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - source 4 - d r a in 10.42 (.410) 9.40 (.370) notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r m s t o je d e c o u t lin e to -25 2a a . 4 dimensions show n are before solder dip, s o l d e r d ip m a x. +0 .16 (.00 6). international re ctifie r lo go assembly lot code exa m ple : this is an ir fr120 w ith as sem bly lot cod e 9u1p first portion of part number second portion of part number 120 ir fr 9u 1p a downloaded from: http:///
irfr/u6215 www.irf.com 9 package outline to-251aa outlinedimensions are shown in millimeters (inches) to-251aa (i-park) part marking information 6.73 (.265) 6.35 (.250) - a - 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0 .25 (.01 0) m a m b 2.28 (.090) 1.14 (.045) 0.76 (.030) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - source 4 - d r a in notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r m s to j e d e c o u t lin e t o -25 2a a . 4 dimensions show n are before solder dip, s o l d e r d ip m a x. +0.1 6 (.00 6). 9.65 (.380) 8.89 (.350) 2x 3x 2.28 (.090) 1.91 (.075) 1.52 (.060) 1.15 (.045) 4 1 2 3 6.45 (.245) 5.68 (.224) 0.58 (.023) 0.46 (.018) inte rnational rectifier lo go as sem bly lot code first portion of part numbe r second portion of part number 120 9u 1p exam ple : this is an irfu120 w ith assem bly lot code 9u1p irfu downloaded from: http:///
irfr/u6215 10 www.irf.com tape & reel information to-252aa tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. o u tline co nfo rm s to e ia -481. 16 mm 13 inc h world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t 3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: 171 (k&h bldg.) 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan tel: 81 33 983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 16907 tel: 65 221 8371 data and specifications subject to change without notice. 5/98 downloaded from: http:///
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ downloaded from: http:///

▲Up To Search▲

Price & Availability of PB-IRFU6215

	To Download PB-IRFU6215 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .